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www.irf.com 1 automotive grade features advanced planar technology dual n channel mosfet low on-resistance dynamic dv/dt rating 175c operating temperature fast switching lead-free, rohs compliant automotive qualified* description specifically designed for automotive applications, this cellular design of hexfet? power mosfets utilizes the latest processing techniques to achieve low on-resistance per silicon area. this benefit combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in automotive and a wide variety of other applications. d1 d1 d 2 d2 g1 s2 g2 s1 top view 8 1 2 3 4 5 6 7 so-8 AUIRF7313Q absolute maximum ratings stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. the thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. ambient temperature (t a ) is 25c, unless otherwise specified. hexfet ? is a registered trademark of international rectifier. * qualification standards can be found at http://www.irf.com/ pd - 97751 v (br)dss 30v r ds(on) typ. 23m max. 29m i d 6.9a parameter max. units v ds drain-source voltage 30 v i d @ t a = 25c continuous drain current, v gs @ 10v 6.9 i d @ t a = 70c continuous drain current, v gs @ 10v 5.8 i dm pulsed drain current 58 p d @t a = 25c power dissipation 2.4 w linear derating factor 0.02 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy 450 mj dv/dt peak diode recovery dv/dt 3.6 v/ns t j operating junction and t stg storage temperature range thermal resistance parameter max. units r jl junction-to-drain lead 20 c/w r ja junction-to-ambient 62.5 a c -55 to + 175

www.irf.com 2 s d g repetitive rating; pulse width limited by max. junction temperature. limited by t jmax , starting t j = 25c, l = 76mh, r g = 50 , i as = 3.5a, v gs =10v. part not recommended for use above this value. i sd 3.5a, di/dt 590a/ s, v dd v (br)dss , t j 175c. pulse width 400 s; duty cycle 2%. when mounted on 1 inch square copper board. r is measured at
static electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units v (br)dss drain-to-source breakdown volta g e 30 ??? ??? v v (br)dss / t j breakdown volta g e temp. coefficient ??? 0.03 ??? v/c ??? 23 29 ??? 32 46 v gs(th) gate threshold volta g e 1.0 ??? 3.0 v g fs forward transconductance 7.5 ??? ??? s i dss drain-to-source leaka g e current ??? ??? 1.0 ??? ??? 25 i gss gate-to-source forward leaka g e ??? ??? -100 gate-to-source reverse leaka g e ??? ??? 100 dynamic electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units q g total gate char g e ??? 22 33 q gs gate-to-source char g e???2.63.9 q gd gate-to-drain ("miller") char g e???6.810 t d(on) turn-on delay time ??? 3.7 ??? t r rise time ??? 7.3 ??? t d(off) turn-off delay time ??? 21 ??? t f fall time ??? 11 ??? c iss input capacitance ??? 755 ??? c oss output capacitance ??? 310 ??? c rss reverse transfer capacitance ??? 120 ??? diode characteristics parameter min. typ. max. units i s continuous source current (body diode) i sm pulsed source current (body diode) v sd diode forward volta g e ??? ??? 1.0 v t rr reverse recovery time ??? 27 40 ns t j = 25c,i f = 3.5a q rr reverse recovery char g e ??? 43 65 nc di / dt = 100a / s 58 ??? ??? ??? ??? 3.0 i d = 3.5a r g = 6.8 v gs =10v v gs = 0v v ds = 25v ? = 1.0mhz na a v ds = 24v, v gs = 0v v ds = 24v, v gs = 0v, t j = 125c v gs = 10v v gs = -20v v ds = 15v v dd = 15v a pf ns nc t j = 25c, i s = 3.5a, v gs = 0v integral reverse p-n junction diode. conditions mosfet symbol showing the conditions v gs = 0v, i d = 250 a reference to 25c, i d = 1ma v gs = 10v, i d = 6.9a r ds(on) static drain-to-source on-resistance m v gs = 4.5v, i d = 5.5a v ds = v gs , i d = 250 a conditions v ds = 15v, i d = 3.5a i d = 3.5a v gs = 20v

www.irf.com 3 ? qualification standards can be found at international rectifier?s web site: http//www.irf.com/ ?? exceptions (if any) to aec-q101 requirements are noted in the qualification report. ??? highest passing voltage ordering information base p art number packa g e t yp e standard pack com p lete part number form quantity AUIRF7313Q so-8 tube 95 AUIRF7313Q tape and reel 4000 AUIRF7313Qtr qualification information ? so-8 msl1 rohs compliant yes esd machine model class m1b (+/- 100 v) ??? aec-q101-002 human body model class h1a (+/- 500 v) ??? aec-q101-001 charged device model class c5 (+/- 2000 v) ??? aec-q101-005 moisture sensitivity level qualification level automotive (per aec-q101) ?? comments: this part number(s) passed automotive qualification. ir?s industrial and consumer qualification level is granted by extension of the higher automotive level.

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1 2 3 4 5 6 7 v gs , gate-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 175c v ds = 15v 60 s pulse width 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 10000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 5 10 15 20 25 30 q g , total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 24v v ds = 15v vds= 6.0v i d = 3.5a -60 -20 20 60 100 140 180 t j , junction temperature (c) 0.5 1.0 1.5 2.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 6.9a v gs = 10v

0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 15v 10v 7.0v 6.0v 4.5v 3.5v 3.0v bottom 2.8v 60 s p ulse width tj = 25c 2.8v 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 15v 10v 7.0v 6.0v 4.5v 3.5v 3.0v bottom 2.8v 60 s p ulse width tj = 175c 2.8v

www.irf.com 5 !" #$ % #$
%& fig 10. maximum avalanche energy vs. draincurrent #$' ( ) *+%& 0.3 0.5 0.7 0.9 1.1 1.3 1.5 v sd , source-to-drain voltage (v) 0.1 1 10 100 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 175c v gs = 0v 25 50 75 100 125 150 175 t a , ambient temperature (c) 0 1 2 3 4 5 6 7 i d , d r a i n c u r r e n t ( a ) 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 400 800 1200 1600 2000 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 1.0a 1.6a bottom 3.5a 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 10 100 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 10 100 t h e r m a l r e s p o n s e ( z t h j a ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthja + t a 0.10 1 10 100 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) operation in this area limited by rds(on) tc = 25c tj = 175c single pulse 100 s 1ms 10ms dc

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0 4 8 12 16 20 v gs , gate-to-source voltage (v) 10 20 30 40 50 60 70 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ) t j = 25c t j = 125c i d = 3.5a 0 10 20 30 40 50 60 i d , drain current (a) 10 20 30 40 50 60 70 80 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ) v gs= 4.5v v gs= 10v

www.irf.com 7 fig 16a. switching time test circuit fig 16b. switching time waveforms fig 15b. unclamped inductive waveforms fig 15a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 t p d.u.t l v ds + - v dd driver a 15v 20v v gs fig 17a. gate charge test circuit fig 17b. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr fig 14. , - ( (.
for n-channel hexfet power mosfets 1k vcc dut 0 l

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p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period /

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v ds 90% 10% v gs t d(on) t r t d(off) t f '( 1 ) $
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www.irf.com 8 so-8 package outline dimensions are shown in millimeters (inches) so-8 part marking e1 d e y b a a1 h k l .189 .1497 0 .013 .050 b as ic .0532 .0040 .2284 .0099 .016 .1968 .1574 8 .020 .0688 .0098 .2440 .0196 .050 4.80 3.80 0.33 1.35 0.10 5.80 0.25 0.40 0 1.27 bas ic 5.00 4.00 0.51 1.75 0.25 6.20 0.50 1.27 mi n max mil l ime t e r s inches mi n max dim 8 e c .0075 .0098 0.19 0.25 .025 basic 0.635 basic 87 5 65 d b e a e 6x h 0.25 [.010] a 6 7 k x 45 8x l 8x c y 0.25 [.010] cab e1 a a1 8x b c 0.10 [.004] 4 3 12 f oot p r i nt 8x 0.72 [.028] 6.46 [.255] 3x 1.27 [.050] 4. ou t l i ne conf or ms t o j e de c ou t l i ne ms - 012 aa. not e s : 1. dimens ioning & tolerancing per asme y14.5m-1994. 2. cont rol l ing dime ns ion: mil l ime t e r 3. dime ns ions are s hown in mil l ime t e rs [inche s ]. 5 dime ns ion doe s not incl u de mol d pr ot ru s ions . 6 dime ns ion doe s not incl u de mol d pr ot ru s ions . mold protrus ions not to exceed 0.25 [.010]. 7 dimens ion is t he lengt h of lead for soldering to a s ubst rat e. mold protrus ions not to exceed 0.15 [.006]. 8x 1.78 [.070]

www.irf.com 9 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters(inches). 3. outline conforms to eia-481 & eia-541. so-8 tape and reel dimensions are shown in millimeters (inches)

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unless specifically designated for the automotive market, international rectifier corporation and its subsidiaries (ir) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. part numbers designated with the ?au? prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. all products are sold subject to ir?s terms and conditions of sale supplied at the time of order acknowledgment. ir warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with ir?s standard warranty. testing and other quality control techniques are used to the extent ir deems necessary to support this warranty. except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. ir assumes no liability for applications assistance or customer product design. customers are responsible for their products and applications using ir components. to minimize the risks with customer products and applications, customers should provide adequate design and operating safeguards. reproduction of ir information in ir data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. reproduction of this information with alterations is an unfair and deceptive business practice. ir is not responsible or liable for such altered documentation. information of third parties may be subject to additional restrictions. resale of ir products or serviced with statements different from or beyond the parameters stated by ir for that product or service voids all express and any implied warranties for the associated ir product or service and is an unfair and deceptive business practice. ir is not responsible or liable for any such statements. ir products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or in any other application in which the failure of the ir product could create a situation where personal injury or death may occur. should buyer purchase or use ir products for any such unintended or unauthorized application, buyer shall indemnify and hold international rectifier and its officers, employees , subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that ir was negligent regarding the design or manufacture of the product. only products certified as military grade by the defense logistics agency (dla) of the us department of defense, are designed and manufactured to meet dla military specifications required by certain military, aerospace or other applications. buyers acknowledge and agree that any use of ir products not certified by dla as military-grade, in applications requiring military grade products, is solely at the buyer?s own risk and that they are solely responsible for compliance with all legal a nd regulatory requirements in connection with such use. ir products are neither designed nor intended for use in automotive applications or environments unless the specific ir products are designated by ir as compliant with iso/ts 16949 requirements and bear a part number including the designation ?au?. buyers acknowledge and agree that, if they use any non-designated products in automotive applications, ir will not be responsible for any failure to meet such requirements. for technical support, please contact ir?s technical assistance center http://www.irf.com/technical-info/ world headquarters: 101 n. sepulveda blvd., el segundo, california 90245 tel: (310) 252-7105

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